September 3, 2024 In Unkategorisiert
Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor
Energy Environ. Sci., 2024, Advance ArticleDOI: 10.1039/D4EE02894E, PaperTahir Imran, Hafiz Sartaj Aziz, Tayyaba Iftikhar, Munir Ahmad, Haibing Xie, Zhenghua Su, Peiguang Yan, Zonghao Liu, Guangxing Liang, Wei Chen, Shuo ChenTo solve the problem of deep-level surface defects, lead thiocyanate is utilized in FACsPbI3 absorber. Additionally,