Interfacial band bending and suppressing deep level defects via Eu-MOF-mediated cathode buffer layer in an MA-free inverted perovskite solar cell with high fill factor

Energy Environ. Sci., 2024, Advance Article
DOI: 10.1039/D4EE02894E, Paper

Tahir Imran, Hafiz Sartaj Aziz, Tayyaba Iftikhar, Munir Ahmad, Haibing Xie, Zhenghua Su, Peiguang Yan, Zonghao Liu, Guangxing Liang, Wei Chen, Shuo Chen
To solve the problem of deep-level surface defects, lead thiocyanate is utilized in FACsPbI3 absorber. Additionally, a novel Eu-MOF was integrated into the buffer layer to regulate band alignment while impeding the hole backflow at the back cathode.
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